Stress and Microstructural Evolution in Metal Oxide Thin Films

Name: Stress and Microstructural Evolution in Metal Oxide Thin Films
Brand: LAP Lambert Academic Publishing
SKU: 9783659905162
Price: 311.6 RON
Availability: InStock

Stress and functionality

Autor: K. V. L. V. Narayanachari

Limbă:

Legare: Carte broșată

Editura: LAP Lambert Academic Publishing

Disponibilitate: În depozitul extern

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System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integr...

Informații despre carte

Autor

K. V. L. V. Narayanachari

Limbă

engleză

Legare

Carte - Carte broșată

Publicat

2016

Pagini

164

EAN

9783659905162

ISBN

365990516X

Enbook ID

13648203

Editura

LAP Lambert Academic Publishing

Greutate

261

Dimensiuni

150 x 220 x 10

Descriere completă

System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform is a single wafer, as in SOC, it requires the ability to deposit various materials that enable the different functions on to an underlying substrate that can host the electronic circuitry. Transition metal oxides which have a wide range of properties are ideal candidates for the functional material. These oxides need to be deposited on Si in certain crystallographic orientations. Thus, during growth of the functional oxide, an ambience in which the Si itself will not oxidize needs to be provided. In addition, during thin film growth on either Si or SiOx surface stresses are generated from various sources. Stress and its relaxation are also associated with the formation and evolution of defects. Both, stress and defects need to be managed in order to harness their beneficial effects and prevent detrimental ones.

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Stress and Microstructural Evolution in Metal Oxide Thin Films

Stress and functionality

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Descriere completă

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