Strained Layer Epitaxy: Volume 379

Name: Strained Layer Epitaxy: Volume 379
Brand: Materials Research Society
SKU: 9781558992825
Price: 134.15 RON
Availability: PreOrder

Materials, Processing, and Device Applications

Autor: John C. BeanKeh-Yung ChengEugene A. FitzgeraldJudy Hoyt

Limbă:

Legare: Copertă tare

Editura: Materials Research Society

Disponibilitate: Retipărire preconizată

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134.15 lei

An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy...

Informații despre carte

Autor

John C. BeanKeh-Yung ChengEugene A. FitzgeraldJudy Hoyt

Limbă

engleză

Legare

Carte - Copertă tare

Publicat

1995

Pagini

521

EAN

9781558992825

ISBN

1558992820

Enbook ID

02060045

Editura

Materials Research Society

Greutate

886

Dimensiuni

155 x 234 x 33

Descriere completă

An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.

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Strained Layer Epitaxy: Volume 379

Materials, Processing, and Device Applications

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