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Carte Strain-Engineered MOSFETs T. K. Maiti

Strain-Engineered MOSFETs

Autor: T. K. Maiti
Limbă: engleză
Legare: Copertă tare
Editura: Taylor & Francis Inc
Disponibilitate: șansă 50%
Şanse de a obține acest titlu
1 416.49 lei
Currently strain engineering is the main technique used to enhance the performance of advanced silic...

Informații despre carte

Autor
T. K. Maiti
Limbă
engleză
Legare
Carte - Copertă tare
Publicat
2012
Pagini
320
EAN
9781466500556
ISBN
9781466500556
Enbook ID
06724764
Editura
Taylor & Francis Inc
Greutate
602
Dimensiuni
160 x 239 x 22

Descriere completă

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSF

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