Simulation Methodology to Compare Alternatives to Silicon Device

Name: Simulation Methodology to Compare Alternatives to Silicon Device
Brand: VDM Verlag Dr. Müller
SKU: 9783639105605
Price: 350.32 RON
Availability: InStock

Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?

Autor: Yawei Jin

Limbă:

Legare: Carte broșată

Editura: VDM Verlag Dr. Müller

Disponibilitate: La editor doar la comandă

Expediem în 17-27 zile

350.32 lei

Practical realization of low-power, high-speed §transistor technologies for future generation nano-§...

Informații despre carte

Autor

Yawei Jin

Limbă

engleză

Legare

Carte - Carte broșată

Publicat

2009

Pagini

188

EAN

9783639105605

Enbook ID

06819525

Editura

VDM Verlag Dr. Müller

Greutate

294

Dimensiuni

151 x 220 x 17

Descriere completă

Practical realization of low-power, high-speed §transistor technologies for future generation nano-§electronics can be achieved with novel structures, §such as FinFET, tri-gate or with the integration of §exotic channel materials,such as Gallium Nitride§(GaN), into Fully-Depleted SOI(FDSOI) transistor §architectures.§Novel Structures are the most promising candidates §for logic devices with sub-20nm gate length. They §can increase gate control and suppress short channel §effects. To compare the feasibility of these §different structures and to project the device §performance, technology CAD (TCAD) simulation is a §reasonable method.§The III-V semiconductors, such as Gallium Nitride §(GaN), have high maximum electron drift velocities §and ballistic mean free paths, which would enable §high-speed transistor operation at very low voltages §with gate lengths below 10nm. Since it s impractical§for experiments currently, TCAD simulation can be §used to project performance goals for aggressively §scaled devices.§This research focus on the methodology to compare §different technologies for alternative§to Silicon based traditional logic device using TCAD §simulations.

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Simulation Methodology to Compare Alternatives to Silicon Device

Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?

Informații despre carte

Descriere completă

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