Polarization Effects in Semiconductors

Name: Polarization Effects in Semiconductors
Brand: Springer-Verlag New York Inc.
SKU: 9781441942289
Price: 857.29 RON
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From Ab Initio Theory to Device Applications

Autor: Colin Wood, Debdeep Jena

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Legare: Carte broșată

Editura: Springer-Verlag New York Inc.

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857.29 lei

This book presents the latest understanding of the solid physics, electronic implications and practi...

Informații despre carte

Autor

Colin Wood, Debdeep Jena

Limbă

engleză

Legare

Carte - Carte broșată

Publicat

2010

Pagini

515

EAN

9781441942289

ISBN

1441942289

Enbook ID

01422734

Editura

Springer-Verlag New York Inc.

Greutate

807

Dimensiuni

155 x 235 x 29

Descriere completă

This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.§The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. §The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

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Polarization Effects in Semiconductors

From Ab Initio Theory to Device Applications

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Descriere completă

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