Molecular Beam Epitaxy

Name: Molecular Beam Epitaxy
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783642971006
Price: 321.56 RON
Availability: InStock

Fundamentals and Current Status

Autor: Helmut Sitter

Limbă:

Legare: Carte broșată

Editura: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Disponibilitate: În depozitul extern

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321.56 lei

Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to...

Informații despre carte

Autor

Helmut Sitter

Limbă

engleză

Legare

Carte - Carte broșată

Publicat

2012

Pagini

382

EAN

9783642971006

ISBN

9783642971006

Enbook ID

06623085

Editura

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Greutate

598

Dimensiuni

155 x 235 x 25

Descriere completă

Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high vacuum epitaxial growth techniques using particle beams have developed rapidly. This development accelerated when different semiconductor devices with quantum well structures were invented in the 1970s. The important implementation of these structures in devices like quantum-well lasers, high electron mobility tran sistors or superlattice avalanche photodiodes gave added impetus to research work and to increasing production aims. Coincident with this development, orig inal research papers and reviews devoted to problems concerning these growth techniques have also rapidly grown in number, and in addition they have become very disversified. At present several hundred original papers on this subject ap pear in the literature each year. However, in contrast to this there is a lack of comprehensive monographs comprising the whole variety of problems related to epitaxial growth of semiconductor films from atomic and molecular beams. This book, which presents a review of the state of the art of molecular beam epitaxy (MBE), as applied to the growth of semiconductor films and multilayer structures, may serve the reader as a convenient general guide to the topics related to this crystallization technique.

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Molecular Beam Epitaxy

Fundamentals and Current Status

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Descriere completă

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