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Carte Gallium Oxide Masataka Higashiwaki

Gallium Oxide

Materials Properties, Crystal Growth, and Devices

Autor: Masataka Higashiwaki, Shizuo Fujita
Limbă: engleză
Legare: Copertă tare
Editura: Springer Nature Switzerland AG
Disponibilitate: În depozitul extern
Expediem în 10-18 zile
485.76 lei
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O...

Informații despre carte

Autor
Masataka Higashiwaki, Shizuo Fujita
Limbă
engleză
Legare
Carte - Copertă tare
Publicat
2020
Pagini
764
EAN
9783030371524
Enbook ID
25208523
Editura
Springer Nature Switzerland AG
Greutate
1346
Dimensiuni
155 x 235 x 48

Descriere completă

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O ). Ga2O has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O .

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