Carte GAA Silicon Nanowire Field Effect Transistor - A Compact Model Mayank Chakraverty

GAA Silicon Nanowire Field Effect Transistor - A Compact Model

A Compact Model of Gate All Around Silicon Nanowire Field Effect Transistor for Circuit Simulation and Design

Limbă: engleză
Legare: Carte broșată
Disponibilitate: În depozitul extern
Expediem în 8-11 zile
325.94 lei
Silicon nanowires have been demonstrated as one of the promising building blocks for future nano-dev...

Informații despre carte

Limbă
engleză
Legare
Carte - Carte broșată
Publicat
2014
Pagini
208
EAN
9783659584183
Enbook ID
06792759
Greutate
328
Dimensiuni
150 x 220 x 12

Descriere completă

Silicon nanowires have been demonstrated as one of the promising building blocks for future nano-devices such as FETs, solar cells, sensors and lithium batteries. The nanowire field effect transistor is one candidate which has the potential to overcome the problems caused by short channel effects in SOI MOSFETs and has gained significant attention from both device and circuit developers. In addition to the effective suppression of short channel effects due to improved gate strength and increased packing density, the multi-gate silicon nanowire FETs show excellent current drive and have the merit that they are compatible with conventional CMOS processes.

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