Electrostatic doping in novel materials

Name: Electrostatic doping in novel materials
Brand: VDM Verlag Dr. Müller
SKU: 9783639147476
Price: 253.9 RON
Availability: InStock

A infrared study

Autor: Zhiqiang Li

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Legare: Carte broșată

Editura: VDM Verlag Dr. Müller

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253.90 lei

In this book we present the investigation of§electrostatic doping in a wide variety of novel§materia...

Informații despre carte

Autor

Zhiqiang Li

Limbă

engleză

Legare

Carte - Carte broșată

Publicat

2009

Pagini

112

EAN

9783639147476

Enbook ID

06823317

Editura

VDM Verlag Dr. Müller

Greutate

183

Dimensiuni

150 x 220 x 7

Descriere completă

In this book we present the investigation of§electrostatic doping in a wide variety of novel§materials incorporated in field-effect transistors§(FETs), including polymers, organic§molecular crystals, graphene and bilayer graphene.§These studies have lead to substantial§advances in our current understanding of these§materials. Specifically, we performed the first§infrared (IR) imaging of the accumulation layer in§poly(3-hexylthiophene) (P3HT)§FETs. Furthermore, we found that charge carriers in§molecular orbital bands with light§mass dominate the transport properties of single§crystal rubrene. More recently, we§explored the IR absorption of graphene and found§several signatures of many-body§interactions. Moreover, we discovered an asymmetric§band structure in bilayer graphene§and determined the band parameters with an accuracy§never achieved before. Our work§has demonstrated that IR spectroscopy is uniquely§suited for probing the electronic§excitations in nanometer-thick accumulation layers in§FET devices.

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Electrostatic doping in novel materials

A infrared study

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Descriere completă

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