Esd: Physics and Devices

This volume is the first in a series of three books addressingElectrostatic Discharge (ESD) physics, devices, circuits and designacross the full range of integrated circuit technologies. ESDPhysics and Devices provides a concise treatment of the ESDphenomenon and the physics of devices operating under ESDconditions. Voldman presents an accessible introduction to thefield for engineers and researchers requiring a solid grounding inthis important area. The book contains advanced CMOS, Silicon OnInsulator, Silicon Germanium, and Silicon Germanium Carbon. Inaddition it also addresses ESD in advanced CMOS with discussions onshallow trench isolation (STI), Copper and Low K materials.

• Provides a clear understanding of ESD device physics and thefundamentals of ESD phenomena.
• Analyses the behaviour of semiconductor devices under ESDconditions.
• Addresses the growing awareness of the problems resulting fromESD phenomena in advanced integrated circuits.
• Covers ESD testing, failure criteria and scaling theory forCMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (SiliconGermanium) technologies for the first time.
• Discusses the design and development implications of ESD insemiconductor technologies.

An invaluable reference for EMC non-specialist engineers andresearchers working in the fields of IC and transistor design.Also, suitable for researchers and advanced students in the fieldsof device/circuit modelling and semiconductor reliability.